Digital Electronics Set 15
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This set of Digital Electronics Multiple Choice Questions & Answers (MCQs) focuses on Digital Electronics Set 15
Q1 | Fusing process is
- reversible
- irreversible
- synchronous
- asynchronous
Q2 | The cell type used inside a PROM is
- link cells
- metal cells
- fuse cells
- electric cells
Q3 | How many types of fuse technologies are used in PROMs?
- 2
- 3
- 4
- 5
Q4 | Metal links are made up of
- polycrystalline
- magnesium sulphide
- nichrome
- silicon dioxide
Q5 | EPROM uses an array of
- p-channel enhancement type mosfet
- n-channel enhancement type mosfet
- p-channel depletion type mosfet
- n-channel depletion type mosfet
Q6 | The EPROM was invented by
- wen tsing chow
- dov frohman
- luis o brian
- j p longwell
Q7 | Address decoding for dynamic memory chip control may also be used for
- chip selection and address location
- read and write control
- controlling refresh circuits
- memory mapping
Q8 | Which of the following describes the action of storing a bit of data in a mask ROM?
- a 0 is stored by connecting the gate of a mos cell to the address line
- a 0 is stored in a bipolar cell by shorting the base connection to the address line
- a 1 is stored by connecting the gate of a mos cell to the address line
- a 1 is stored in a bipolar cell by opening the base connection to the address line
Q9 | The check sum method of testing a ROM
- allows data errors to be pinpointed to a specific memory location
- provides a means for locating and correcting data errors in specific memory locations
- indicates if the data in more than one memory location is incorrect
- simply indicates that the contents of the rom are incorrect
Q10 | The initial values in all the cells of an EPROM is
- 0
- 1
- both 0 and 1
- alternate 0s and 1s
Q11 | To store 0 in such a cell, the floating point must be
- reprogrammed
- restarted
- charged
- power off
Q12 | The major disadvantage of RAM is?
- its access speed is too slow
- its matrix size is too big
- it is volatile
- high power consumption
Q13 | Which one of the following is used for the fabrication of MOS EPROM?
- tms 2513
- tms 2515
- tms 2516
- tms 2518
Q14 | How many addresses a MOS EPROM have?
- 1024
- 512
- 2516
- 256
Q15 | To read from the memory, the select input and the power down/program input must be
- high
- low
- sometimes high and sometimes low
- alternate high and low
Q16 | ROMs retain data when
- power is on
- power is off
- system is down
- all of the mentioned
Q17 | When a RAM module passes the checker board test it is
- able to read and write only 0s
- faulty
- probably good
- able to read and write only 1s
Q18 | What is the difference between static RAM and dynamic RAM?
- static ram must be refreshed, dynamic ram does not
- there is no difference
- dynamic ram must be refreshed, static ram does not
- sram is slower than dram
Q19 | What is access time?
- the time taken to move a stored word from one bit to other bits after applying the address bits
- the time taken to write a word after applying the address bits
- the time taken to read a stored word after applying the address bits
- the time taken to erase a stored word after applying the address bits
Q20 | What are the typical values of tOE?
- 10 to 20 ns for bipolar
- 25 to 100 ns for nmos
- 12 to 50 ns for cmos
- all of the mentioned
Q21 | Which of the following is not a type of memory?
- ram
- fprom
- eeprom
- rom
Q22 | The chip by which both the operation of read and write is performed
- ram
- rom
- prom
- eprom
Q23 | RAM is also known as
- rwm
- mbr
- mar
- rom
Q24 | If a RAM chip has n address input lines then it can access memory locations upto
- 2(n-1)
- 2(n+1)
- 2n
- 22n
Q25 | The n-bit address is placed in the
- mbr
- mar
- ram
- rom